金属Ni诱导非晶硅薄膜晶化研究  

Study on Nickel-Induced Crystallization of Amorphous Silicon Thin Films

作　　者：张良艳[1] 林祖伦[1] 祁康成[1] 韦新颖[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2010年第1期10-12,共3页Chinese Journal of Electron Devices

摘　　要：采用金属镍诱导晶化非晶硅薄膜的方法制备多晶硅薄膜,研究了不同退火温度和退火时间对晶化效果的影响,使用SEM、EDS和XRD分析了薄膜的晶化效果。实验发现,非晶硅薄膜在460℃以下退火不能晶化,在460℃退火30min已全部晶化;随着退火温度升高或退火时间延长,晶化效果变好;退火2h之后晶体生长近乎饱和。Polycrystalline silicon films were prepared by Ni-induced crystallization （NIC） of a-Si films. The effects of annealing temperature and annealing time on the crystallization were investigated. The NIC poly-Si films were characterized by SEM, EDS and XRD. It was found that a-Si films remained amorphous after annealing below 460 ℃ while crystallized after annealing at 460 ℃ for 30 min. Crystallinity of NIC poly-Si films was improved obviously with the increasing annealing temperature and slightly with the extension of annealing time, and the crystallization almost saturated after annealing for 2 hours.

关 键 词：金属诱导晶化 非晶硅薄膜 多晶硅薄膜 

分 类 号：TN304.055[电子电信—物理电子学]