基于结终端扩展的4H-SiC肖特基势垒二极管研制  

Development of Ni Schottky Barrier Diodes on 4H-Silicon Carbide Based on JTE

作　　者：张发生[1,2] 李欣然[1] 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082 [2]中南林业科技大学计算机与信息工程学院,长沙410004

出　　处：《固体电子学研究与进展》2010年第1期146-149,共4页Research & Progress of SSE

基　　金：湖南省高等学校科学研究项目(08C942);湖南省科技厅科技项目(2008FJ3102)

摘　　要：采用高真空电子束热蒸发金属Ni分别作肖特基接触和欧姆接触,离子注入形成结终端扩展表面保护,研制出Ni/4H-SiC肖特基势垒二极管(SBD)。I-V特性测量说明,Ni/4H-SiCSBD有较好的整流特性,热电子发射是其主要的运输机理。实验测量其反向击穿电压达1800V,且反向恢复特性为32ns。By using the electron beam evaporation to deposit metal Ni to form the Schottky contact and ohmic contact respectively in high vacuum ambient, Ni/4H-SiC Schottky Barrier Diodes were made in structures containing two-JTE by using B^＋ implantation. Measurents of the I-V characteristics of these diodes show the devices have good rectifying property and thermionic emission current is the dominant conduction mechanism for these Schottky contacts. The reverse breakdown-voltage for Ni/4H-SiC Schottky diodes have been found to be 1800V, and the reverse recovery characteristics of it is just 32 ns.

关 键 词：碳化硅 肖特基势垒二极管 结终端扩展 欧姆接触 

分 类 号：TN311.7[电子电信—物理电子学]