太阳能级Si片清洗工艺分析  

Analysis of Solar-Grade Silicon Wafer Cleaning Process

作　　者：任丽[1] 王平[2] 李艳玲[3] 王安平[3] 褚世君[2] 张兵[2] 李宁[2] 罗晓英[2] 

机构地区：[1]河北工业大学化工学院,天津300130 [2]河北工业大学材料学院,天津300130 [3]中国电子科技集团公司第四十五研究所,北京101601

出　　处：《半导体技术》2010年第4期309-312,共4页Semiconductor Technology

摘　　要：在实验基础上对太阳能级Si片碱性清洗工艺进行了分析,指出碱性清洗液在适宜的工艺环境下,配合超声清洗和表面活性剂的使用可以获得良好的清洗效果。结果表明,表面金属浓度分别达到Cu元素小于1.3×10^(14)atoms/cm^2,Fe元素小于5×10^(13)atoms/cm^2。碱性清洗液与Si晶体发生两步化学反应,平衡后OH^-离子浓度保持稳定,是以获得稳定的清洗效果同时提高清洗液的使用效率。Alkaline cleaning process for solar-grade silicon wafer is analyzed based on the experiments, it is pointed out that a good cleaning effect of alkaline cleaning solution can be got in the appropriate technology environment with ultrasonic cleaning and surface-active agent. The results show that the surface metal content is limited lower than 1.3 × 10^14 atoms/cm^2 for Cu, 5 × 10^13 atoms/cm^2 for Fe. Alkaline cleaning solution has two-step chemical reaction with Si, equilibrium concentration of OH^- ions remain stable, so stable cleaning effects and high usage efficiency of cleaning solution can be obtained.

关 键 词：硅片 碱性清洗 表面活性剂 超声清洗 对太阳能级 

分 类 号：TN305.2[电子电信—物理电子学]