基于表面势的HEMT模型分析  

Model Analysis for HEMT Based on Surface Potential

作　　者：吕彬义[1,2] 孙玲玲[2] 孔月婵[1] 陈辰[1] 刘军[2] 陈磊[2] 

机构地区：[1]单片集成电路与模块国家级重点实验室,南京210016 [2]杭州电子科技大学教育部射频电路与系统重点实验室,杭州310018

出　　处：《半导体技术》2010年第4期320-324,共5页Semiconductor Technology

基　　金：国家自然科学基金(60706002);CETC55所砷化镓微波毫米波单片和模块电路国防重点实验室基金(9140C1402030803)

摘　　要：将表面势的概念引入GaAs高电子迁移率晶体管器件结构,以建立可精确描述HEMT器件输入/出特性的新模型。通过分析最基本的HEMT结构,参考Si基MOSFET中Pao-sah模型的分析方法,对沟道电荷利用泊松方程表述,并结合能带电压关系,建立HEMT器件中表面势(Φ_s)对于栅压(V_(GS))的关系。基于上述分析计算了沟道中电子的饱和点。根据推导所得方程,模型计算得到的某具体器件沟道面电荷密度(n_s)-栅压(V_(GS))关系曲线和基于T-CAD工具仿真结果在线性区得到很好的吻合。The conception of surface potential into GaAs high electron mobility transistor （HEMT） is introduced in order to develop a new model for describing the input/output characteristics of HEMT device accurately. By analyzing basic structure of HEMT, and taking Pao-sah model for Si MOSFET as reference, the relation between surface potential in HEMT and gate voltage biased was obtained explicitly through Poisson＇ s equation of channel charge and band-voltage relation, as well as the saturation point of channel electron-sheet density （ns）. According the model equations, channel electron-sheet density （ns） versus gate voltage （VGs） of a sample device was calculated. Good agreement in linear region between calculated ns vs VGS based on our model and simulated results based on T-CAD are achieved.

关 键 词：高电子迁移率管晶体管 表面势 泊松方程 Pao-sah模型 

分 类 号：TN604[电子电信—电路与系统]