表面型静电感应晶闸管负阻导通特性的研究  

Study on the Conducting Characteristics of Surface-Type Static Induction Thyristor

作　　者：季涛[1] 杨利成[2] 

机构地区：[1]上海工程技术大学基础教学学院,上海201620 [2]兰州大学物理科学与技术学院微电子学研究所,兰州730000

出　　处：《半导体技术》2010年第4期325-328,共4页Semiconductor Technology

基　　金：上海市高校选择培养优秀青年教师科研专项基金资助(gid-07037)

摘　　要：运用漂移-扩散模型,对表面型静电感应晶闸管的导通特性进行了数值模拟。分析表明,表面型静电感应晶闸管(SITH)具有与纵向结构SITH类似的负阻导通特性,而且表面型结构的各电极相对面积比纵向结构要小很多,阴极和栅极之间的电容更小,从而具有更快的开关速度和更高的灵敏度。对表面型SITH的电势分布、载流子分布以及阳极I-V特性进行了深入地计算和分析。显示数值模拟结果十分接近实际测量结果,模拟中也发现栅极的位置对栅极的控制性能的影响很大。The conducting characteristics of surface-type static induction thyristor （SITH） with horizontal structure ave numerically simulated with drift-diffusion model. The analysis result indicates that the surface- type SITH has the characteristics of negative resistance conduction which is similar to the vertical structure of SITH, the relative area of each electrode in surface structure is smaller than in vertical structure, and the capacitance between cathode and gate are even smaller. So the surface-type SITH has much faster switching speed and higher sensitivity. The detailed calculation and analysis ave carried on electric potential distribution and carrier concentration distribution in the channel, and the I-V characteristics of SITH ave calculated and analyzed. The simulation datas ave very agreed with the experimental effect of the gate is sensitively influenced by the gate position. t results. The controlling

关 键 词：静电感应晶闸管 表面型 双注入效应 势垒 鞍点 

分 类 号：TN386.7[电子电信—物理电子学]