玻璃衬底制备AlN薄膜结构的研究  

Study on Preparation of AlN Thin Films on the Glass Substrate

作　　者：李瑞霞[1] 彭启才[1] 曾伦[2] 赵广彬[1] 

机构地区：[1]西华大学材料科学与工程学院,四川成都610039 [2]西南技术物理研究所,四川成都610041

出　　处：《压电与声光》2010年第2期311-313,共3页Piezoelectrics & Acoustooptics

摘　　要：利用中频磁控反应溅射技术在玻璃衬底上制备氮化铝(AlN)薄膜,并经退火处理。利用X-衍射和原子力显微镜分析了AlN薄膜的结构及表面形貌。结果表明,衬底温度和退火工艺对AlN薄膜的结构和表面形貌有重要影响。研究表明,衬底温度为230℃时,AlN薄膜的表面粗糙度最小,退火能减小AlN薄膜表面粗糙度。AIN thin films were deposited on glass substrate by intermediate frequency impulse magnetron reac- tive sputtering method and processed by annealing. The preparation of the samples was studied by X-ray diffraction （XRD）. The surface morphology of the as-deposited sample was studied by atom force microscopy （AFM）. The result showed that the substrate temperature and the annealing had important effect on preparation and surface to- pography of A1N thin films. It was also found that the surface roughness of AIN thin films was the smallest when the substrate temperature was 230 ℃. The annealing could reduce surface roughness of AIN thin films.

关 键 词：玻璃衬底 衬底温度 氮化铝薄膜 退火 

分 类 号：TN405[电子电信—微电子学与固体电子学]