用双晶 X 射线衍射研究 Si 液相外延层  

The study of Si liquid phase epilayers using double crystal X ray diffraction

作　　者：张仕国[1] 江鉴[1] 陈立登 袁骏[1] 张民杰 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《浙江大学学报（自然科学版）》1998年第2期188-192,共5页

基　　金：国家教委资助;浙江大学回国人员启动基金

摘　　要：以Ｉｎ作溶剂、使用石墨滑动舟在硅衬底上液相法生长了硅外延层．双晶Ｘ射线衍射表明，对不同的生长条件，一些样品显示出具有双峰的摇摆曲线，另外一些则只有单峰，对于前者，ＸＰＳ测不出Ｉｎ的存在，而对后者，ＸＰＳ却显示硅外延层含有Ｉｎ．由此得出结论，只用双晶Ｘ射线衍射难以确定外延层的掺杂情况．Si films were grown on Si substrates using liquid phase epitaxy with a graphite boat and In as the solvant.When the technique of double crystal X ray diffraction was used to measure the epilayers,double peaks in some samples were observed,while others appeared only single peak.For the former,no In was detected using XPS. On the other hand,the later showed the presence of In is the epilayers.This result shows that it is diffcult to tell the doping in the epilayers from the measurement of double crystal X ray diffraction only.

关 键 词：双晶X射线衍射 液相外延 掺杂 硅 

分 类 号：TN304.12[电子电信—物理电子学] O474[理学—半导体物理]