ZnO∶Al透明导电薄膜的研制  

Studies of Al Doped ZnO Transparent Conducting Films

作　　者：应春[1] 沈杰[1] 陈华仙[1] 杨锡良[1] 章壮健[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》1998年第2期125-129,共5页Vacuum Science and Technology

摘　　要：介绍用直流平面磁控溅射方法制备掺铝的氧化锌透明导电薄膜并研究了其特性，阐述了金属氧化物透明导电薄膜研究的发展情况及其应用前景，并讨论了氧化锌掺铝薄膜的优点。介绍了ZnO∶Al薄膜的制备情况：靶的制备及薄膜的制备过程。测量了薄膜的光电特性，包括透射比、折射率、消光系数、方块电阻、电阻率、载流子浓度和迁移率等参数，并分析了各种实验条件对薄膜性能的影响。Aluminum doped zincum oxide transparent conducting films were grown by dc magnetron sputtering.The film growth technique and the ZnO∶Al target fabrication were discussed.The electrical and optical properties were stud-ied, including transmittance, refractive index, extinction coefficient, sheet resistance, resistivity, carrier concentrations and mobility. And the research and application prospects of metallic oxide transparent conducting films were reviewed also.

关 键 词：掺铝 氧化锌 薄膜 反应磁控溅射 透明 导电 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055