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作 者:孙海波[1,2] 石锋[1] 曹玉萍[1] 郭永福[1] 刘文军[1] 薛成山[1]
机构地区:[1]山东师范大学半导体研究所,济南250014 [2]山东交通学院数理系,济南250023
出 处:《微纳电子技术》2010年第5期277-281,共5页Micronanoelectronic Technology
基 金:国家自然科学基金资助项目(90301002;90201025)
摘 要:采用磁控溅射技术在Si(111)衬底上溅射Au薄膜,900℃退火生成Au点阵模板,在Au点阵模板上溅射ZnO薄膜,O2气氛下1 000℃退火制备了ZnO堆垒单晶棒。研究了不同直径Au点阵模板对ZnO单晶棒结构性能的影响。采用扫描电镜(SEM)、高分辨透射电子显微镜(HRTEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)对样品结构形貌进行了分析。结果表明,生成有序排列的ZnO棒均由诸多六方纤锌矿单晶堆垒而成,较小Au点阵生成单晶棒的直径约为100nm。室温光致发光PL谱表明在376nm出现一个较强近紫外发射,在488nm附近出现一个较宽的深能级绿光发射,说明所制备样品具有良好的发光特性。The Au-dot templates were synthesized by annealing Au films at 900 ℃ which were deposited on the Si(111)substrate with magnetron sputtering system.The ZnO films were deposited on the Au-dot templates with sputtering,then the samples were annealed at 1 000 ℃ in O2 to fabricate ZnO stacked single-crystal rods.The effects of Au-dot templates with different diameters on the structural performances of ZnO single-crystal rods were researched.The structures and morphologies of the samples were analyzed by scanning electron microscopy(SEM),high-resolution transmission electron microscopy(HRTEM),X-ray diffraction(XRD)and X-ray photoelectron spectroscopy(XPS).The results show that the aligned ZnO rods are composed of single crystal blocks in hexagonal wurtzite phase,and the diameters of ZnO rods with smaller Au dots are about 100 nm.Room temperature photoluminescence spectrum shows that a strong UV emission band and a broad green emission band appear at 376 nm and 488nm,respectively.It indicates that the synthesized ZnO rods have good luminescence properties.
关 键 词:氧化锌 Au点阵模板 磁控溅射 单晶堆垒 光学特性
分 类 号:TB383[一般工业技术—材料科学与工程] TN304.21[电子电信—物理电子学]
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