原生CVD ZnS 6.2μm处吸收峰的消除及机理分析  

Mechanism Analysis and Elimination of Absorption Peak near 6.2 μm in As-grown CVD ZnS

作　　者：付利刚[1,2] 张福昌[2] 魏乃光[2] 赵永田[2] 王学武[2] 吕反修[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]北京有色金属研究总院北京国晶辉红外光学科技有限公司,北京100088

出　　处：《人工晶体学报》2010年第2期440-443,448,共5页Journal of Synthetic Crystals

基　　金：军工配套项目

摘　　要：原生CVD ZnS的特征之一是由于内部与S空位相关的Zn-H络合物的存在而在6.2μm处形成吸收峰。相对较低的沉积温度和较高的沉积压力以及Zn/H2S是产生这一问题的主要原因。通过改进实验参数(沉积温度、沉积压力、Zn/H2S),能够制备出与经过HIP处理过的ZnS一样的无Zn-H络合物的原生ZnS。本文依据Zn-H络合物产生的原因对沉积温度、压力等作用机理进行了分析,总结出进一步提高CVD ZnS质量的方法。One character of as-grown CVD ZnS is the absorption peak near 6.2 μm which is arised form Zn-H species associated with a sulfur vacaney.Lower deposition temperature and higher pressure,Zn/H2S are main reasons for the phenomenon.By controlling the CVD process parameters we have fabricated the as-grown specimen which hasn＇ t Zn-H inside just like being hot isostatic pressed.In this article,the mechanism of deposition temperature,pressure and Zn/H2S to Zn-H species is discussed and the means improving CVD ZnS performance is also presented.

关 键 词：原生CVD ZNS Zn-H络合物 吸收峰 

分 类 号：O73[理学—晶体学]