对Fukui法测量MESFET栅极串联电阻的改进  

Improvement of Gate Series Resistance Measurement of MESFET in Fukui Method

作　　者：穆甫臣[1] 李志国[1] 张万荣 郭伟玲[1] 孙英华[1] 严永鑫[1] 

机构地区：[1]北京工业大学电子工程系可靠性物理研究室,北京100022

出　　处：《Journal of Semiconductors》1999年第3期250-253,共4页半导体学报（英文版）

基　　金：电子部"九五"预研项目和北京市科技新星项目资助

摘　　要：本文描述了改进的 Fukui法 .利用改进的 Fukui法可以精确地测量 Ga As MESFET的栅极串联电阻 .实测结果表明 ,漏 -源电阻的测量受栅势垒内建电势影响较小而受夹断电压影响较大 ,从漏 -源电阻与 X( X为栅势垒内建电势、夹断电压和栅 -源电压的函数 )An improved Fukui method is described in this paper. We can measure gate series resistance of GaAs MESFET more accurately using this improved Fukui method. The experiment results show that the measurement of drain to source resistance is affected by the built\|in voltage of Schottky barrier much less than by pinch\|off voltage ,and the error directions of pinch\|off voltage can be determined qualitatively by the curve of drain to source resistance vs. x(x is a function of the built\|in voltage of Schottky barrier, pinch\|off voltage and the voltage between gate and source.).

关 键 词：MESFET 半导体器件 Fukui法 栅极串联电阻 

分 类 号：TN305.93[电子电信—物理电子学]