硅基GaN薄膜的外延生长  

Epitaxial Growth of GaN Film on Si Substrate

作　　者：张昊翔[1] 叶志镇[1] 卢焕明[1] 赵炳辉[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《Journal of Semiconductors》1999年第2期143-146,共4页半导体学报（英文版）

基　　金：国家教委"跨世纪优秀人才"基金;国家自然科学基金

摘　　要：本文报道采用简便的真空反应法在Ｓｉ（１１１）衬底上生长出了六方结构的ＧａＮ单晶薄膜，并对ＧａＮ薄膜的表面形貌、结晶学性质和光学特性作了研究．ＳＥＭ表明外延层表面光亮平整，无裂纹出现，ＸＲＤ图谱上有一ＧａＮ（０００２）衍射峰，其半高宽为０．５°，室温下的光致发光谱在３７３ｎｍ处有一个很强的发光峰，其半高宽为８ｎｍ（３５．７ｍｅＶ）．Abstract GaN epilayer grown on Si substrate by a novel vacuum reaction method rather than MOCVD or MBE is reported, and its surface morphology, crystallinity and optical property are also investigated. SEM shows that surface of GaN epilayer is mirror like flat and crack free.A pronounced GaN(0002) peak appears in the XRD pattern. The FWHM of the XRC for(0002) diffraction from the GaN is 0 5°. The PL spectrum shows that the GaN epilayer emits light at the wavelength of 373nm with a FWHM of 8nm(35 7meV).

关 键 词：氮化镓 硅基 外延生长 半导体薄膜技术 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054