磨削工艺对Ge单晶抛光片的影响  

Effect of Grinding Process on Ge Polishing Wafers

作　　者：吕菲[1] 赵权[1] 刘春香[1] 窦连水[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2010年第5期22-25,共4页Equipment for Electronic Products Manufacturing

摘　　要：因磨削工艺不同导致Ge单晶片表面粗糙度出现很大差异,并最终影响抛光速率、抛光片的表面质量及抛光片时间依赖性雾的形成。粗糙度大的磨削片,初始抛光速率快,但抛光片达到镜面所需时间却延长。在抛光后的去蜡工序中,粗糙度大的Ge片其表面更容易粘附蜡液而导致表面质量下降。检验合格的抛光片在存储过程中表面出现时间依赖性雾,分析了时间依赖性雾的形成原因是由于粗糙的背表面更容易存储水份和有机溶剂。要提高抛光片的质量必须控制磨削片的粗糙度。The surface roughness of Ge gringding wafers effects on Ge polishing wafers was investigated. The surface roughness of Ge wafers was effected by grinding process. This paper shows the different polishing wafers surface quality ,polishing velocity and the formation of the time-dependent haze （TDH） as the surface roughness of Ge gringding wafers. The effect of the surface roughness of Ge gringding wafers on polishing velocity was expressed from the view point of CMP mechanism. Our results indicate the rough surface of Ge wafers is easy to adhere wax to reduce the polishing wafers surface quality. The time-dependent haze is related to the surface roughness of Ge wafers. The reason of forming time-dependent haze was analysised.

关 键 词：磨削 粗糙度 化学机械抛光(CMP) 抛光速率 时间雾 

分 类 号：TN305.2[电子电信—物理电子学]