脉冲偏压辅助热丝法沉积金刚石膜的实验研究  

Study on impulse voltage bias enhanced hot filament method for diamond film growth

作　　者：胡东平[1] 季锡林[1] 梅军[1] 

机构地区：[1]中国工程物理研究院结构力学研究所,四川绵阳629100

出　　处：《金刚石与磨料磨具工程》2010年第1期56-59,66,共5页Diamond & Abrasives Engineering

基　　金：国防科技工业民用专项工程研制项目

摘　　要：本文针对金刚石涂层应用于工具、模具的需要,研究脉冲偏压在热丝法沉积金刚石工艺中促进金刚石形核、生长的作用。进行了不同脉冲电压、频率、占空比条件下制备金刚石涂层的试验,采用金相显微镜观察涂层的颗粒尺寸及均匀性、致密性,确定了优化的工艺参数。采用优化的工艺参数在硬质合金基体表面沉积金刚石涂层,观察金刚石涂层的结构并测试与基体的结合力。结果表明,生长的金刚石涂层颗粒细小、均匀,与基体的结合力良好。In this research, aiming at the application in tools and dies, diamond films are grown by impulse voltage bias enhanced hot filament chemical vapor deposition. Different parameters such as voltage, frequency and duty-cycle are tested through diamond growth experinent. The films are examined for their homogeneity and compactness by means of metallurgical microscopy. Diamond films are deposited on WC alloy substrate by optimized process parameters, fine crystal diamond and high adhesion of films to substrates are obtained.

关 键 词：金刚石膜 热丝CVD 脉冲偏压 

分 类 号：TQ164[化学工程—高温制品工业]