多晶硅发射极晶体管直流特性研究  

A Study of DC Characteristics of Transistors with Polysilicon Emitters

作　　者：刘英坤[1] 张大立[1] 周名辉 张振宇 周晓黎 李锦标 

机构地区：[1]电子工业部第十三研究所

出　　处：《半导体技术》1999年第1期28-31,共4页Semiconductor Technology

摘　　要：研究了砷注入多晶硅发射极晶体管的直流特性，并与采用常规平面工艺制作的晶体管性能进行了比较。结果表明多晶硅发射极晶体管具有较高的发射效率，高的电流能力，改善了ＥＢ击穿和ＣＢ击穿。电流增益依赖于淀积多晶硅前的表面处理条件。The DC characteristics of transistors with arsenic implanted polysilicon emitter have been investigated.The results are compared with data of bipolar transistors made with the conventional planar technique.It is shown that better emitter efficiency,high current carrying capability,and improved emitter base breakdown as well as collector base breakdown can be achieved for transistors with polysilicon emitters.Additionally,current gain depends on the silicon surface cleaning condition before polysilicon deposition.

关 键 词：多晶硅发射极 砷注入 电流增益 掺杂 晶体管 

分 类 号：TN325.2[电子电信—物理电子学] TN305.3