PET材料表面制备氧化硅薄膜的研究  

The production methods study of SiO_x coating film deposited on PET substrate

作　　者：刘玉兰[1] 汪建华[1] 熊礼威[1] 刘长林[1] 

机构地区：[1]武汉工程大学材料科学与工程学院等离子体化学与新材料重点实验室,湖北武汉430074

出　　处：《武汉工程大学学报》2010年第5期70-73,共4页Journal of Wuhan Institute of Technology

摘　　要：为了满足材料在饮料、啤酒等包装领域方面的要求,在PET材料内壁涂覆氧化硅薄膜是一种十分有效的方法.本文分别使用磁控溅射法和微波等离子体化学气相沉积法(PECVD)在PET材料表面制备了氧化硅薄膜,通过结果分析,对两种方法从原理、各自优点等方面进行了比较,并就沉积时间、工作气压、电源功率对各自所沉积薄膜阻隔性的影响作了相应分析,得出了两种方法各自的最佳工艺条件.Polyethylene terephthalate（PET） has been widely favored in the field of packaging for its good temperature,pressure,stability,and high-barrier and other properties.In order to meet the PET material in the beverage,beer packaging requirements,in the inner wall of PET materials,coating of silicon oxide film is a very effective method.The authors of this article adapted two production methods of SiOx coating film deposited on the PET substrate magnetron sputtering and microware plasma chemical vapor deposition and comparing their principle,virtue separately,also analyzed the relation between the parameters on the barrier properties,such as deposition time,discharge pressure,and plasma power.

关 键 词：PET 氧化硅薄膜 磁控溅射 PECVD 阻隔性能 

分 类 号：TB324[一般工业技术—材料科学与工程] TB43