Hg_(1-x)Cd_xTe材料AES定量分析中的电子束和离子束效应  

Electron and Ion Beams Effects on AES Quantitative Analysis of Hg_(1-x) Cd_x Te

作　　者：杨得全[1] 范垂祯[1] 

机构地区：[1]中国空间技术研究院兰州物理研究所,兰州730000

出　　处：《真空科学与技术》1999年第1期15-19,共5页Vacuum Science and Technology

摘　　要：在Hg1-xCdxTe材料的AES分析中 ,由于分析电子束辐照作用 ,可诱导表面Hg原子的脱附和热升华 ,导致短时间内样品表面严重失Hg ,使AES定量分析结果产生很大的误差。实验结果表明 ,在超高真空中分析电子束辐照下局部Hg元素的挥发损失以负指数关系进行。通过选择离子束溅射速率大于电子束蒸发速率 ,并在溅射的同时进行俄歇信号收集 ,则可减小或消除分析电子束对元素Hg的蒸发作用 ,获得稳定的俄歇信号。实验结果还指出 ,溅射离子束的参数会影响元素的相对溅射产额 。The rapid preferential surface sublimation and evaporation of Hg in Hg 1- x Cd x Te (CMT)material in the processes of both ion sputtering and electron beam irradiation may result in considerable experimental error in AES analysis.Our studies have revealed that the localized Hg evaporation depends exponentially on electron irradiation time.Provided that the well selected Hg evaporation rate caused by Ar ion sputtering is smaller than that resulted from electron irradiation,and the Auger electrons are collected during sputtering,the experimental error in AES analysis can be minimized or eliminated and stable Auger signals can be obtained.Our results also show that the sputtering rate of Hg 1- x Cd x Te depends significantly on the various parameters in Ar ion beam,such as,its primary ion energy,its density and its incident angle.

关 键 词：俄歇电子能谱 电子束效应 离子束效应 汞镉碲 

分 类 号：TN304.26[电子电信—物理电子学] TN304.07