镀Pd Cu线键合工艺中Pd行为研究  

Behaviors of Palladium in Palladium Coated Copper Wire Bonding Process

作　　者：张滨海[1] 钱开友 王德峻 从羽奇 赵健 范象泉[1] 王家楫[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]日月光封装测试有限公司,上海201203

出　　处：《半导体技术》2010年第6期564-568,共5页Semiconductor Technology

摘　　要：由于Cu线热导率高、电性能好、成本低,将逐渐代替传统Au线应用于IC封装。但Cu线键合也存在Cu材料本身固有特性上的局限:易氧化、硬度高及应变强度等。表面镀Pd Cu线材料的应用则提供了一种防止Cu氧化的解决方案。然而,Cu线表面的Pd层很可能会参与到键合界面形成的行为中,带来新的问题,影响到Cu线键合的强度和可靠性。对镀Pd Cu线键合工艺中Pd的行为进行了系统的研究,使用了SEM,EDS等分析手段对Cu线、烧结Cu球(FAB)、键合界面等处Pd的分布状况进行了检测,结果证明Pd的空间分布随着键合工艺的进行发生了很大的变化,同时还对产生Pd分布变化的原因进行了分析和讨论。Because of its high thermal conductivity,great electrical property and low cost,copper wire is considered to replace the conventional gold wire in IC assembly processes.However,copper wire bonding also has its limitations.Copper oxidation,high hardness and yield strength are the main disadvantages that manufacturers concerns most.The application of copper wire coated with Pd is a solution to prevent copper oxidation during the bonding process.Nevertheless,Pd coated copper wire brings in new possible influences to bonding interface and its reliability.A systematic study on behaviors of Pd in Pd coated copper wire for bonding process is given.SEM and EDS were used to analyze Pd distributions in copper wire,FAB（free air ball）,bonded ball and its interface.It is shown that Pd distribution changes with bonding process,the factors are discussed.

关 键 词：封装 铜线键合 镀钯层 金属间化合物 

分 类 号：TN305.93[电子电信—物理电子学]