氧化硅薄膜的制备和性质研究  

Fabrication and Characterization of Silicon Oxide Thin Films

作　　者：王新[1] 向嵘[1] 李野[1] 王国政[1] 姜德龙[1] 端木庆铎[1] 田景全[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《微电子学》2010年第3期454-456,共3页Microelectronics

基　　金：吉林省科技厅青年科研基金资助项目(20080170)

摘　　要：在室温条件下,采用反应磁控溅射方法,在硅衬底上制备氧化硅薄膜。研究了制备过程中不同氧气含量时氧化硅薄膜的生长速率、薄膜中的O/Si原子比例、表面粗糙度、薄膜的介电性能。发现薄膜的生长速率和介电常数随溅射时氧气含量的增加先增大后减小;薄膜中的O/Si原子比例随氧气含量的增加先增大,后来变化不明显,且很难达到或超过理想比例(2∶1);薄膜的粗糙度随氧气含量的增加先减小,后来基本保持不变。Silicon oxide thin films were fabricated on silicon substrate by reactive magnetron sputtering.Dependence of deposition rate,O/Si ratio,surface roughness and dielectric properties of silicon oxide thin film on oxygen concentration in sputtering was investigated.It was found that deposition rate and dielectric constant first increased and then decreased with increasing oxygen concentration,while O/Si ratio first increased and then showed no significant change with increasing oxygen concentration.And it is difficult to have an ideal O/Si ratio（2∶1）.The roughness of thin film decreased and then kept constant with increasing oxygen concentration.

关 键 词：磁控溅射 氧化硅 生长速率 介电常数 原子比例 

分 类 号：TB34[一般工业技术—材料科学与工程] TN405[电子电信—微电子学与固体电子学]