深亚微米抗辐照PDSOI nMOSFET的热载流子效应  

Hot Carrier Effect in Deep Submicron Radiation Hardened PDSOI nMOSFETs

作　　者：卜建辉[1] 毕津顺[1] 宋李梅[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2010年第3期461-463,共3页Microelectronics

摘　　要：基于中国科学院微电子研究所开发的0.35μm SOI工艺,制备了深亚微米抗辐照PD-SOI H型栅nMOSFET。选取不同沟道宽度进行加速应力实验。实验结果表明,热载流子效应使最大跨导变化最大,饱和电流变化最小,阈值电压变化居中。以饱和电流退化10%为失效判据,采用衬底/漏极电流比率模型,对器件热载流子寿命进行估计,发现同等沟道长度下,沟道越宽的器件,载流子寿命越短。Deep submicron radiation hardened partially depleted silicon on insulator（PDSOI） H-gate nMOSFETs was fabricated in 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences（IMECAS）.Acceleration stressing experiments were made to study hot carrier effect（HCE） of nMOSFETs with different channel widths.Results demonstrated that HCE made the maximal transconductance degradation the greatest,the threshold voltage in the middle,and the saturation current degradation the lowest.Based on the failure criteria of saturation current degradation by 10%,HCE life time was estimated by using substrate/drain current ratio method.It has been shown that,for the same channel length,the wider the channel is,the shorter the HCE life time will be.

关 键 词：PDSOI NMOSFET 热载流子效应 

分 类 号：TN386[电子电信—物理电子学]