Influence of surface passivation on the minority carrier lifetime, Fe-B pair density and recombination center concentration  

作　　者：LI Feng MA ZhongQuan MENG XiaJie LU Peng YU ZhengShan HE Bo 

机构地区：[1]SHU-SOEN's R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China [2]Shanghai Solar EnerTech Corp, Shanghai 200120, China

出　　处：《Chinese Science Bulletin》2010年第17期1828-1833,共6页

基　　金：supported by the National Natural Science Foundation of China (60876045);Shanghai Leading Academic Discipline Project (S30105);the Innovation Foundation for the Graduate student of Shanghai Univer-sity (SHUCX091012);R&D Foundation of SHU-SOENs PV Joint Lab. (SS-E0700601);Shanghai Leading Basic Research Project (09JC14-05900)

摘　　要：Three kinds of methods (0.08 mol/L iodine in ethanol, SiNx:H, and 40% HF) are used to passivate solar-grade Czochralski (Cz) silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers are measured using the microwave photo-conductance decay (μ-PCD) technique. Based on the measured minority carrier lifetime, it is found that the passivation quality achieved by 0.08 mol/L iodine in ethanol is the best, while that by 40% HF solution is the worst. For the identical wafer, the density distribution of Fe-B pairs is different when different passivation methods are used. When the wafers are passivated by SiNx:H, there exists a close correlation between the distribution of minority carrier lifetime and the concentration distribution of Fe-B pairs. Furthermore, for wafers with high-quality passivation, there is a strong correlation between the recombination center concentration and the Fe-B pair density. All the analyses verify that the surface passivation quality of wafers influences the measurement results of minority carrier lifetime, Fe-B pair density and recombination center concentration.Three kinds of methods （0.08 mol/L iodine in ethanol, SiNx：H, and 40% HF） are used to passivate solar-grade Czochralski （Cz） silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers are measured using the microwave photo-conductance decay （μ-PCD） technique. Based on the measured minority carrier lifetime, it is found that the passivation quality achieved by 0.08 mol/L iodine in ethanol is the best, while that by 40% HF solution is the worst. For the identical wafer, the density distribution of Fe-B pairs is different when different passivation methods are used. When the wafers are passivated by SiNx：H, there exists a close correlation between the distribution of minority carrier lifetime and the concentration distribution of Fe-B pairs Furthermore, for wafers with high-quality passivation, there is a strong correlation between the recombination center concentra- tion and the Fe-B pair density. All the analyses verify that the surface passivation quality of wafers influences the measurement results of minority carrier lifetime, Fe-B pair density and recombination center concentration.

关 键 词：少数载流子寿命 表面钝化 密度分布 复合中心 浓度分布 铁 硼 少子寿命 

分 类 号：O473[理学—半导体物理]