GaN基肖特基器件中的反常电容特性(英文)  

ANOMALOUS CAPACITANCE OF GaN-BASED SCHOTTKY DIODES

作　　者：储开慧[1] 张文静[1] 许金通[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2010年第3期161-166,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(60708027)

摘　　要：研究了测试频率为0.3～1.5MHz时GaN基肖特基器件的电容特性.实验发现,在Au/i-GaN肖特基器件的电容-电压(C-V)特性曲线中,出现了峰和负值电容,而Au/i-Al0.45Ga0.55N肖特基器件的C-V特性曲线中则既没有峰也没有负值电容的出现.对肖特基器件的电流-电压(I-V)特性和C-V特性进行参数提取和分析后认为,负值电容和峰的出现源于界面态的俘获和损耗,但较大的串联电阻将减弱界面态的作用.The capacitance-voltage （C-V） measurements of GaN-based Schottky diodes were carried out in the frequency range of 0.3 - 1.5MHz. Anomalous peaks and negative value of capacitance were observed in the C-V plots of Au/i-GaN Schottky diodes under forward bias, while neither of them was seen in the plots of Au/i-Al0.45 Ga0.55 N Schottky diodes. Based on the parameters extracted from the current-voltage （I-V） and C-V plots of GaN and A10.45 G0.55 N Schottky diodes, the peak and negative capacitance are ascribed to the capture and loss of interface charges. These processes are greatly sup- pressed when there exists a huge series resistance in the diode.

关 键 词：电容-电压特性 肖特基器件 GAN基材料 

分 类 号：TN311.8[电子电信—物理电子学]