氨化Ga_2O_3/Pd/Sapphire薄膜制备GaN纳米线  

Synthesis of gallium nitride nanowires by ammoniating Ga_2O_3/Pd/sapphire films

作　　者：薛成山[1] 郭永福[1] 石锋[1] 庄惠照[1] 刘文军[1] 曹玉萍[1] 孙海波[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《功能材料》2010年第6期976-979,共4页Journal of Functional Materials

基　　金：国家重大自然科学基金资助项目(90201025;90301002)

摘　　要：利用金属元素钯作催化剂,采用磁控溅射后氨化法,成功的在Sapphire衬底上制备出GaN纳米线。X射线衍射和X射线光电子能谱研究显示合成的纳米线具有六方纤锌矿GaN结构。通过扫描电子显微镜,透射电子显微镜和高分辨透射电子显微镜观察分析得出GaN纳米线为单晶结构,其纳米线的直径约为10～60nm,长度达几十个微米。室温下以325nm波长的光激发样品表面,发现GaN带边发光峰有较弱的蓝移。最后简单讨论了GaN纳米线的生长机制。GaN nanowires had been synthesized by ammoniating technique under flowing ammonia atmosphere on sapphire substrate with Pd catalysis.Studies by using X-ray diffraction and X-ray photoelectron spectroscopy indicate that the nanowires were hexagonal GaN.Observations by using scanning electron microscopy,transmission electron microscopy and high-resolution transmission electron microscopy show that GaN is single-crystal structure.The diameter of the nanowires is in the range of 10-60nm with the lengths up to several tens of micrometers.Photoluminescence spectrum shows a weakly blue-shift comparison to bulk GaN.Finally,the growth mechanism of GaN nanowires is also discussed.

关 键 词：纳米线 GAN 磁控溅射 单晶 钯催化 

分 类 号：TN304[电子电信—物理电子学]