GaAs/AlGaAs薄膜压阻特性研究  

Study on Piezoresistivity of GaAs/AlGaAs Film

作　　者：李秋柱[1] 刘国文[1] 谭振新[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,山西太原030051

出　　处：《中北大学学报（自然科学版）》2010年第3期291-294,共4页Journal of North University of China(Natural Science Edition)

摘　　要：为了探索新的微机电转换方法,提出一种GaAs/AlGaAs压阻薄膜结构.该结构采用分子束外延生长技术(MBE),在半绝缘GaAs衬底(001)方向上生长GaAs/Al0.4Ga0.6As半导体薄膜制备而成.利用表面微机械工艺和体微机械工艺,加工制作了基于GaAs/Al0.4Ga0.6As压敏电阻条的加速度计结构,室温条件下利用拉曼光谱仪测试系统测试了悬臂梁上压阻薄膜的应变因子.研究了该薄膜结构的压阻效应,得到Al0.4Ga0.6As的应变因子可达70,相当于AlN-GaN超晶格结构压阻的值,有望应用于新的微机械力电耦合器件中.In order to explore a new electromechanical coupling technique,the GaAs/Al0.4Ga0.6As piezoresistive film was put forward and grown by molecular beam epitaxy（MBE） on a semi-insulating GaAs substrate.The GaAs-based piezoresistive accelerometer was produced with the surface micromachining process and the GaAs bulk micromachining process.At room temperature using measuring system of Raman spectrometer the measurements of the piezoresistive properties were performed by static experiments.The maximum gauge factor（GF） for the Al0.4Ga0.6As film can reach 70,which is equivalent with the GF of piezoresistance of AlN-GaN superlattice structure and can be used in micro-mechanical sensors.

关 键 词：GAAS/ALGAAS 薄膜 压阻特性 微加速度计 应变因子 

分 类 号：TM390.2[电气工程—电机]