In_2O_3透明薄膜晶体管的制备及其电学性能的研究  

Fabrication and performance of indium oxide based transparent thin film transistors

作　　者：徐天宁[1,2] 吴惠桢[1] 张莹莹[1] 王雄[1] 朱夏明[1] 原子健[1] 

机构地区：[1]浙江大学物理系,现代光学仪器国家重点实验室,杭州310027 [2]浙江工业大学之江学院理学系,杭州310024

出　　处：《物理学报》2010年第7期5018-5022,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60676003);浙江省自然科学基金(批准号:Z406092)资助的课题~~

摘　　要：采用磁控溅射方法在玻璃衬底上生长了In2O3晶体薄膜.该薄膜具有(111)晶面择优取向,晶粒尺寸达到33nm.利用光刻工艺制作了以In2O3晶体薄膜为沟道层的底栅式薄膜晶体管.In2O3薄膜晶体管具有良好的栅压调制特性,场效应迁移率达到6.3cm2/(V·s),开关电流比为3×103,阈值电压为-0.9V.结果表明,In2O3薄膜晶体管在新型平板显示领域具有潜在的应用前景.Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature.The In2O3 film was polycrystalline with a preferred（111） orientation and a grain size of 33 nm was estimated.The bottom-gate staggered thin film transistors（TFTs） were fabricated by standard photolithography,with In2O3 as active channel layers.The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2 /V·s,an on-off current ratio of 3×103,and a threshold voltage of-0.9 V.Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.

关 键 词：In2O3晶体薄膜 磁控溅射 薄膜晶体管 场效应迁移率 

分 类 号：TN321.5[电子电信—物理电子学]