120-nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48)As InP-based HEMT  

作　　者：黄杰 郭天义 张海英 徐静波 付晓君 杨浩 牛洁斌 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]School of Physical Science and Technology,Southwest University

出　　处：《Journal of Semiconductors》2010年第7期46-48,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60806024);the Fundamental Research Funds for the Central Universities,China(No.XDJK2009C020).

摘　　要：120 nm gate-length In_（0.7）Ga_（0.3）As/In_（0.52）Al_（0.48） As InP-based high electron mobility transitions（HEMTs） are fabricated by a new T-shaped gate electron beam lithograph（EBL） technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack.These devices also demonstrate excellent DC and RF characteristics：the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm,446 mA/mm, -1.0 V,141 GHz and 120 GHz,respectively.The material structure and all the device fabrication technology in this work were developed by our group.120 nm gate-length In_（0.7）Ga_（0.3）As/In_（0.52）Al_（0.48） As InP-based high electron mobility transitions（HEMTs） are fabricated by a new T-shaped gate electron beam lithograph（EBL） technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack.These devices also demonstrate excellent DC and RF characteristics：the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm,446 mA/mm, -1.0 V,141 GHz and 120 GHz,respectively.The material structure and all the device fabrication technology in this work were developed by our group.

关 键 词：HEMT INP INGAAS/INALAS cutoff frequency T-shaped gate 

分 类 号：TN386[电子电信—物理电子学] TN305