GaAs化学机械抛光引入亚表面损伤层的分析  

Analyses of Sub surface Damages in SI GaAs Wafers Caused by Chemomechanical Polishing

作　　者：郑红军[1] 卜俊鹏[1] 何宏家[1] 吴让元[1] 曹福年[1] 白玉珂[1] 惠峰[1] 

机构地区：[1]中国科学院半导体所

出　　处：《固体电子学研究与进展》1999年第1期111-115,共5页Research & Progress of SSE

摘　　要：采用ＴＥＭ、ＸｒａｙＲｏｃｋｉｎｇＣｕｒｖｅ等测试的方法，对ＧａＡｓ晶片化学机械抛光后亚表面损伤层引入的深度进行了分析，探讨了碱性ＳｉＯ２胶体水溶液加入不同浓度的电解质（ＮａＯＣｌ）后所发生胶粒带电程度的变化，从胶体理论的角度解释了ＳｉＯ２胶体溶液不稳定对ＧａＡｓ抛光晶片亚表面损伤层的影响。The depth of sub surface damage in the chemomechanical polished GaAs wafer is investigated by transmission electron microscopy (TEM) and X ray Rocking Curve.The variation of static charge in charged colloid grains with the concentration of NaOCl in the colloidal Si is discussed.The influence of unstability of the colloidal Si on the subsurface damage in polished GaAs wafer is explained in term of the colloid state theory.

关 键 词：砷化镓 抛光 亚表面损伤层 

分 类 号：TN305.2[电子电信—物理电子学] TN304.23