固体C_(60)/n-GaN接触的电学性质  

Electrical Properties of the Contact of Solid C 60 and n GaN

作　　者：陈开茅[1] 孙文红[1] 秦国刚[1] 吴克[1] 李传义[1] 章其麟[2] 周锡煌[3] 顾镇南[3] 

机构地区：[1]北京大学物理系 [2]电子工业部第十三研究所 [3]北京大学化学系

出　　处：《Journal of Semiconductors》1999年第4期333-337,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文通过在ＧａＮ衬底上生长固体Ｃ６０膜制成了Ｃ６０／ｎ－ＧａＮ接触，并对其电学性质作了测量．我们发现该接触是理想因子接近于１的强整流接触异质结．在偏压为±１Ｖ时，其整流比高达１０６．在固定正向偏压条件下，异质结电流是温度倒数的指数函数，通过求激活能得出异质结的有效势垒高度为０．５３５ｅＶ．本文还发现，固体Ｃ６０／ｎ－ＧａＮ样品中Ｃ６０的电导随着正向偏压的增加而迅速变大．这种现象被认为起因于ｎ－ＧａＮ对Ｃ６０的电子注入．Abstract C 60 /n GaN contacts have been fabricated by depositing solid C 60 on n GaN films, and their electrical properties were measured. We find that the contact is a strongly rectifying heterojunction with a rectification ratio greater than 10 6, and its ideal factor is close to 1. Current temperature measurement shows an exponential dependence of current on reciprocal temperature, from which the effective barrier height is determined to be 0 535eV. The series resistance measured decreases with the increase of the forward voltage and finally tends to be a constant value.

关 键 词：氮化镓 电学性质 制备 

分 类 号：TN304.23[电子电信—物理电子学]