Pseudo-MOS晶体管和nMOS晶体管评估SOI材料抗总剂量辐射能力的比较  

Comparison between Pseudo -MOS transistor and nMOS transistor in evaluating the resistant ability of SOI materials to total dose radiation

作　　者：毕大炜[1] 张正选[1] 张帅[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2010年第3期271-275,共5页Journal of Functional Materials and Devices

摘　　要：本文用辐射加固和未加固的SIMOX(注氧隔离)SOI(绝缘体上硅)材料制作了Pseudo-MOS晶体管和nMOS晶体管,并进行了X射线总剂量辐射实验。结果表明加固工艺能有效提高SIMOXSOI材料的抗总剂量辐射能力,同时也表明Pseudo-MOS晶体管能有效的替代nMOS晶体管对SOI材料的抗总剂量辐射能力进行评估。The Pseudo- MOS transistors and nMOS transistors were fabricated in SIMOX （Separation by Implanted Oxygen） SOI （Silicon- on- insulator） wafers unhardened or hardened by silicon ion implantation. The total dose response of transistors mentioned above was investigated under 10 Kev X ray radiation. The results show that the hardening procedure is a very effective method to enhance the hardness of the SIMOX SOI materials and that the Pseudo - MOS transistor can be used effectively to replace the nMOS transistor in evaluating the resistant ability of SOI materials to total dose radiation.

关 键 词：SIMOX SOI 总剂量辐射效应 Pseudo—MOS晶体管 

分 类 号：TN304[电子电信—物理电子学]