高性能SiC整流二极管研究  

Investigation of High Performance SiC Diodes

作　　者：杨霏[1] 商庆杰[1] 李亚丽[1] 闫锐[1] 默江辉[1] 潘宏菽[1] 李佳[1] 刘波[1] 冯志红[1] 付兴昌[2] 何庆国[1] 蔡树军[1,2] 杨克武[1,2] 

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第7期394-396,408,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60876009,60890192)

摘　　要：在n型4H-SiC单晶导电衬底上制备了具有MPS(merged p-i-n Schottky diode)结构和JTE(junction termination extension)结构的肖特基势垒二极管。通过高温离子注入及相应的退火工艺,进行了区域性p型掺杂,形成了高真空电子束蒸发Ni/Pt/Au复合金属制备肖特基接触,衬底溅射Ti W/Au并合金做欧姆接触,采用场板和JTE技术减小高压电场集边效应。该器件具有良好的正向整流特性和较高的反向击穿电压。反向击穿电压可以达到1300V,开启电压约为0.7V,理想因子为1.15,肖特基势垒高度为0.93eV,正向电压3.0V时,电流密度可以达到700A/cm2。4H-SiC Schottky barrier diodes （SBDs） with merged p-i-n Schottky （MPS） structures and junction termination extension （JTE） structures were fabricated on the n-4H-SiC monocrystal conducting substrate.The p-type doped region was formed by high temperature ion implantation and annealing.High vacuum electron beam evaporation was used to deposit Ni/Pt/Au to form a Schottky contact,and the RF sputtering of TiW/Au and high temperature annealing were used to form an ohmic contact.The edge-crowding-effect was decreased in the high-voltage electric field by the field plate and JTE technology.The device has good forward rectification characteristic and higher reverse breakdown voltage.The breakdown voltage of 1 300 V,threshold voltage of 0.7 V,ideal factor of 1.15,Schottky barrier height of 0.93 eV,and the current density of 700 A/cm^2 at the forward voltage of 3.0 V for 4H-SiC MPS diodes were obtained experimentally.

关 键 词：碳化硅 击穿电压 合并p-i-n肖特基 肖特基接触 欧姆接触 场板 

分 类 号：TN313.5[电子电信—物理电子学] TN304.24