Ku波段GaAs单片功率放大器  

Ku-Band GaAs Monolithic Power Amplifiers

作　　者：王会智[1] 吴思汉 何庆国[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]国防科技信息中心,北京100142

出　　处：《微纳电子技术》2010年第7期456-459,共4页Micronanoelectronic Technology

摘　　要：基于GaAs PHEMT在微波领域的卓越性能,设计并实现了两款Ku波段GaAs单片功率放大器。简述了GaAs PHEMT器件的工作原理,并抽取了精准的EEHEMT模型,通过独特的设计方法并结合相应的仿真软件设计了两款Ku波段单片功率放大器。经过精准测试,两款电路呈现的性能如下:在13～14GHz频带内,其中第一款电路的饱和输出功率Po>38dBm(脉宽100μs,占空比10%),功率增益GP>20dB,典型功率附加效率PAE>28%;第二款电路的饱和输出功率Po>40dBm(脉宽100μs,占空比10%),功率增益GP>19dB,典型功率附加效率PAE>28%。结果表明,基于PHEMT的GaAs单片功率放大器在Ku波段可以实现优良的性能。Based on the excellent performances of GaAs PHEMTs in the microwave field,two kinds of GaAs Ku-band monolithic power amplifiers were designed and realized.The operating principle of GaAs PHEMTs was described,and the accurate EEHEMT model was extracted.Two kinds of Ku-band monolithic power amplifiers were designed by a unique method combined with relevant simulation software.Through the accurate test,the performances of two circuits are as follow：the saturation output power is of 38 dBm （pulse width：100 μs,duty cycle：10%）,GP〉20 dB and PAE〉28% at 13-14 GHz for the first circuit; the saturation output power is of 40 dBm（pulse width：100 μs,duty cycle：10%）,GP〉19 dB and PAE〉28% at 13-14 GHz for the other.The results show that GaAs PHEMTs monolithic power amplifiers can realize the excellent performance at Ku-band.

关 键 词：GAAS KU波段 单片放大器 PHEMT 脉冲 

分 类 号：TN304.23[电子电信—物理电子学] TN43