4H-SiC表面热氧化生长SiO_x薄膜特性的研究  

Characteristics of SiO_x film grown on 4H-SiC by thermal oxidation

作　　者：陈厦平[1] 朱会丽[2] 蔡加法[1] 

机构地区：[1]厦门大学物理系,福建厦门361005 [2]集美大学理学院,福建厦门361021

出　　处：《量子电子学报》2010年第4期474-479,共6页Chinese Journal of Quantum Electronics

基　　金：福建省自然科学基金(2009J05151)

摘　　要：采用扫描电子显微镜(SEM)、原子力显微镜(AFM)和X射线光电子能谱(XPS)测试方法对4H-SiC上热氧化生长的氧化硅(SiO_x)薄膜表面形貌进行观测,并分析研究SiO_x薄膜和SiO_x/4H-SiC界面的相关性质,包括拟合Si2p、O1s和C1s的XPS谱线和分析其相应的结合能,以及分析SiO_x层中各主要元素随不同深度的组分变化情况,从而获得该热氧化SiO_x薄膜的化学组成和化学态结构,并更好地了解其构成情况以及SiO_x/4H-SiC的界面性质。The surface morphology of the SiOx film grown on 4H-SiC by thermal oxidation was observed by scanning electron microscope （SEM） and atomic force microscopy （AFM）, respectively. The characteristics of the SiO. film and the interface of SiOx/4H-SiC were studied by X-ray photoelectron spectroscopy （XPS）. The Gaussian fitting of Si2p, O1s and C1s XPS energy spectra and the corresponding binding energy were analyzed. The composition variances of the SiO. film were also researched with XPS measurement on the different depths. It is expected to find out the chemical composition and state of the SiOx film grown on 4H-SiC by thermal oxidation, and obtain the characteristics of the SiOx/4H-SiC interface.

关 键 词：材料 SIOX薄膜 热氧化 X射线光电子能谱 4H—SiC 

分 类 号：O484.5[理学—固体物理] TB303[理学—物理]