铜引线键合中两级加载方式下硅基板应力  

Substrate Stresses for double load copper wire bonding

作　　者：黄华[1] 常保华[1] 都东[1] ZHOU Yunhong 

机构地区：[1]清华大学机械工程系,先进成形制造教育部重点实验室,北京100084 [2]Department of Mechanical & Mechatronics Engineering, University of Waterloo, Waterloo, Ontario, N2L3G1, Canada

出　　处：《清华大学学报（自然科学版）》2010年第7期970-973,共4页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金海外青年学者合作研究基金(50628506);国家自然科学基金青年基金(50705049)

摘　　要：铜引线键合在集成电路封装工业中得到了越来越多的应用。在铜引线键合中,采用压力两级加载的方式能够减少硅基板的损坏,但其机理目前还不清楚。该文建立了3D非线性有限元模型来模拟铜引线键合过程,比较了常规加载和两级加载方式中的硅基板受力状态。结果表明:超声功率相同且铜球变形相同时,两级加载方式中基板承受的压应力大于常规加载方式,拉应力两者相近,而剪应力则小于常规加载方式。不同加载方式下的基板受力分析为找出两级加载方式减少基板缺陷的作用机理提供了依据。Copper wire is increasingly used in microelectronics packaging manufacturing.The double load bonding process reduces the under pad damages during Cu wire bonding;however,the mechanism is not yet well understood.A non-linear 3D finite element model was used to study the Cu wire bonding procedure to analyze the stress distributions,especially in the silicon substrate,for conventional and double load wire bonding.For the same ultrasound power and the same copper ball deformation,the compressive stress under the pad with double load wire bonding is much larger than with the conventional bonding procedure,the tensile stresses are almost the same,and the shear stresses under the pad are less with double load wire bonding.The reduced damage under the pad for double load wire bonding is related to the reduced stresses.

关 键 词：引线键合 两级加载 基板 有限元 应力 

分 类 号：TH1[机械工程]