新型表面再构的倒装AlGaInP LED  

Wafer-bonded AlGaInP LEDs with reframed surface

作　　者：郭婧[1] 邹德恕[1] 高伟[1] 秦园[1] 刘自可[1] 沈光地[1] 

机构地区：[1]北京工业大学电控学院光电子技术实验室,北京100124

出　　处：《光电子．激光》2010年第8期1129-1132,共4页Journal of Optoelectronics·Laser

基　　金：国家高新技术研究发展计划资助项目(2006AA03A121)

摘　　要：研究一种表面再构的具有全方位反光镜(ODR)结构的倒装AlGaInP半导体发光二极管(LED)。通过湿法腐蚀方法再构N-AlGaInP盖层表面,形成类金字塔的表面结构,使不同角度入射的光有更多的机会出射。比较了表面再构LED与常规LED的电、光学特性,在注入电流为20 mA时,经过表面再构LED的轴向光强和输出光功率是常规LED的1.5倍,表面再构后大大提高了LED的外量子效率,减少了LED内部热量的积累,提高了LED芯片的可靠性。A surface textured wafer bonded light-emitting diode（LED） with omni-directional reflector（ODR） is introduced.In order to increase the light extraction efficiency,the surface of the LED chip is textured by using hydrochloric acid.The optical and electrical performances of surface textured and conventional LED are compared.From the experimental results,the light output power and light intensity of the surface textured LED are 1.5 times higher than that of conventional LED at injection current of 20 mA.And at the same time the surface textured LED prevents the heat accumulation inside chip,which increases the reliability of LED chip.

关 键 词：ALGAINP 表面再构 提取效率 倒装 

分 类 号：TN313[电子电信—物理电子学]