Al_2O_3薄膜的发光性能及其结构研究  

LIGHT EMITTING PROPERTIES AND MICROSTRUCTURES OF ALUMINA THIN FILMS

作　　者：储汉奇[1] 李合琴[1] 聂竹华[1] 都智[1] 朱景超[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《真空与低温》2010年第2期90-94,共5页Vacuum and Cryogenics

基　　金：国家基础研究计划(2008CB717802);安徽省自然科学基金(090414182);安徽省高校自然科学基金(KJ2009A091)

摘　　要：以高纯铝为靶材,在不同氧氩比例下,采用直流反应磁控溅射法制备了Al2O3薄膜。用F-4500型荧光分光光度计测量其荧光光谱,观察到416 nm和438 nm处的光致发光发射谱(PL),是由于氧空位充当的色心所致,且随着氧氩比例的增加,峰的位置基本不变,强度先上升后下降,这是由于氧氩比例的改变导致氧空位浓度变化引起的。通过对未退火及不同温度退火样品的XRD分析发现:室温沉积的Al2O3薄膜为非晶态,400℃退火开始有晶体出现,且退火温度越高,结晶性能越好。Al2O3thin films were prepared by reactive DC magnetron sputtering with pure aluminum target at different O2/Ar ratios.Exciting and Emitting spectra were obtained by using F-4500 fluorometer.Two peaks generated by the color center coming from the oxygen vacancy were observed respectively around 416 nm and 438 nm.With the increase of O2/Ar ratio,the peak positions are not changed however their relative intensity ascends firstly then descends.This is related to the concentration of color center caused by the change of O2/Ar ratio.X-ray diffraction spectra of the Al2O3 annealed and un-annealed in different temperature showed that the deposited Al2O3 thin films were amorphous in room temperature,until 400 ℃,Al2O3 crystal became crystal,and the crystallinity is improved with the increase of the annealing temperature.

关 键 词：AL2O3薄膜 直流反应磁控溅射 氧氩比例 光致发光光谱 氧空位 XRD 

分 类 号：TB43[一般工业技术]