氧与bcc相Co(100)表面相互作用的光电发射研究(英文)  

Photoemission Study of the Interaction of Oxygen with Co Surface of Metastable bcc Phase

作　　者：张发培[1] 徐鹏寿[1] 徐法强[1] 陆尔东[1] 余小江[1] 张新夷[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《Chinese Journal of Chemical Physics》1999年第1期77-81,共5页化学物理学报（英文）

基　　金：国家自然科学基金

摘　　要：通过在GaAs（100）表面生长具有弱有序的bcc相Co超薄膜，利用同步辐射光电发射和XPS，研究了室温下不同氧暴露量时Co膜的氧吸附行为。价带谱和Co3p发射谱结果表明，当暴露氧量低于4L时，氧解离吸附;更高的氧暴露量导致表面CoO相的成核与生成。退火温度超过470K后，氧以原子形式向Co基体中扩散。O1sXPS谱分解显示，存在着对应于不同氧吸附位的两种氧物种。Metastable, weakly ordered ultrathin Co films with he phase were grown on GaAs (100)surface, and the coverage dependence of oxygen adsorption on the sulface of Co films was studied at room temperature by synchrotron radiation photoemission and XPS, For the exposuire between 1~4L of O2, oxygen adsorbs dissociatively, Hider exposure corresponds to nucleation and formation of surface CoO phase from the analysis of valence-band spectra and Co3p emission. Higher temperature exceeding 470K causes the dissolution of oxygen into the Co matrix, The decomposition of O1s XPS indicates the existence of two species of oxygen corresponding to the different adsorbed sites.

关 键 词：氧 吸附 光电发射 XPS 钴膜 超薄膜 

分 类 号：O614.812[理学—无机化学] O613.3[理学—化学]