CVD金刚石膜表面晶粒度的研究  

STUDY ON CRYSTALLITE SIZES ON THE SURFACE OF CVD DIAMOND FILMS

作　　者：周灵平[1] 李绍禄[1] 

机构地区：[1]湖南大学材料测试研究中心,长沙410082

出　　处：《炭素》1999年第2期17-19,共3页Carbon

基　　金：机械工业技术发展基金!95JA0501

摘　　要：采用热丝CVD法连续沉积金刚石，其晶粒尺寸与沉积时间至非线性关系，随着时间的延长，晶粒生长速率降低；工艺条件对金刚石膜表面晶粒度的影响主要与产生二次形核的时机有关。高的衬底温度和工作气压有利于得到粗大的晶粒尺寸，提高碳源浓度可使未成膜前的晶粒尺寸增大，而对成膜后的晶粒尺寸只有在浓度足够大时才产生显著影响。Crystallite sizes of diamond deposited continuously by hot filament chendcal vapour deposite increased and its growth rate decreased with prolonging of deposited time. It is foUnd that crystallite sizes of diamod were influenced by growth process condition, and were related with the occasion of second nucleation. Wider particles were obtained easily under high substrate temperature and total gas pressure. Crystallite sizes increased with increasing Of concentration of carbon source gas before the diamond particles joined together and only when concentration of carbon source gas was enough large after diamond particles formed film.

关 键 词：金刚石膜 晶粒度 二次形核 薄膜 CVD法 

分 类 号：TQ163[化学工程—高温制品工业]