国产半导体器件长期贮存试验研究  

Research on Long-Term Storage Test of Domestic Semiconductor Devices

作　　者：高兆丰[1] 童亮[1] 高金环[1] 徐立生[1] 

机构地区：[1]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《半导体技术》2010年第8期800-802,共3页Semiconductor Technology

摘　　要：分析了在北方实验室条件下,贮存25年的国产商用高频小功率晶体管的特性与可靠性,通过对10批共1 460只器件的试验、检测,并与25年前的原始数据进行对比分析,发现了贮存器件存在直流放大倍数(HFE)退化、内引线开路、外引线可焊性失效三种失效模式,并对其失效原因、失效机理进行了分析。在考虑到现代技术可以消除的因素(用充干N2封装或已焊接使用),预计80年代的国产商用高频小功率晶体管贮存失效率水平小于10-7。用贮存25年的实物揭示了国产半导体器件贮存存在的主要失效模式,为国产半导体器件提高贮存可靠性提供了真实可靠的依据。The characteristics and reliabilities of domestic commercial high-frequency low-power transistors were analyzed,which were stored in northern laboratory conditions for 25 years.Compared with the original data 25 years ago,through the test and inspection of 10 batches amount to 1 460 devices,three failure modes of stored devices were found,such as the degeneration of HFE,the opening of inner down-lead and the solderability failure of external down-lead.Then the failure reasons and mechanisms were analyzed.Considering the factors which can be eliminated by modern technique（encapsulated by dry nitrogen or soldered already）,the anticipative failure rate of stored high-frequency low-power transistors is less than 10-7.The substantiality which deposited for 25 years indicates the main failure mode of domestic stored semiconductor devices,and provided genuine and credible evidence to increase the store reliability of domestic semiconductor devices.

关 键 词：长期贮存 可靠性 失效率 可焊性 水汽含量 

分 类 号：TN306[电子电信—物理电子学]