1053nm超辐射发光二极管量子阱的设计  

Design of Quantum Well in 1053nm Superluminescent Diodes

作　　者：黄鑫[1] 宋爱民[2] 段利华[3] 

机构地区：[1]重庆邮电大学光电工程学院.重庆400065 [2]重庆教育学院,重庆400067 [3]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2010年第4期535-538,共4页Semiconductor Optoelectronics

摘　　要：对于给定波长的超辐射发光二极管,根据应变量子阱理论,研究了器件有源层组分与量子阱宽度的关系,并讨论了量子阱中In组分相对于不同波长的最小临界值。用MOCVD生长器件,实验结果与理论计算值吻合。The relationship between the width of the single quantum well（SQW）and the Indium composition in the 1 053nm Superluminescent Diodes（SLD）was researched according to the theory of strained effect in the quantum well.The minimum Indium composition for the given lasing wavelength was discussed.Then experiments were carried out on the diodes grown by Metal Organic Chemical Vapor Deposition（MOCVD）.The experimental results show that the calculated value agrees well with theoretical calculations.

关 键 词：超辐射发光二极管 单量子阱 MOCVD 

分 类 号：TN312.8[电子电信—物理电子学]