脉冲偏压对铝合金上TiN膜生长的影响  

Influence of pulse bias on growth behavior of TiN film on Al alloy

作　　者：宋贵宏[1] 张硕[1] 娄茁[1] 李锋[1] 陈立佳[1] 

机构地区：[1]沈阳工业大学材料科学与工程学院,沈阳110870

出　　处：《沈阳工业大学学报》2010年第4期375-379,410,共6页Journal of Shenyang University of Technology

基　　金：辽宁省科委博士科研启动基金资助项目(20041022);辽宁省教育厅科研资助项目(2004F006)

摘　　要：为了研究在铝合金上硬质膜的性能,促进硬质TiN膜在铝合金构件上的应用,利用电弧离子镀在7075铝合金上沉积TiN膜层,并通过改变脉冲偏压幅值研究其对薄膜生长过程的影响.结果表明,生长的TiN膜具有柱状特征,在无偏压或低偏压时,柱状特征明显,但随着负偏压值的增大,柱状特征变得不明显,膜层中Ti和N的原子比率增加,由无偏压、低偏压时近似为1.0增加到-200V偏压时的1.2.在0～-200V偏压范围内,沉积膜的平均生长速率由1.5μm/h增加到11.3μm/h.随着负偏压的增加,TiN膜的(111)方向的择优取向越来越明显,而(200)方向强度越来越小.沉积膜呈柱状生长,具有明显的择优取向,其程度受脉冲偏压影响.In order to investigate the properties of TiN hard film and promote the application of TiN film in Al alloy components,the TiN film was prepared on 7075 Al alloy by arc ion plating technology. The influence of pulse bias on the growth behavior of TiN film was studied through changing the pulse bias value during deposition. The results show that the growth of TiN film characterizes the column growth. At no or low bias,the column growth characteristic is obvious. However,the column growth characteristic becomes indistinct with increasing the pulse bias. The atom ratio of Ti to N increases with increasing the pulse bias. The ratio increases from approximately 1.0 at no or low bias to 1.2 at the bias of -200V. In the bias range from 0 to -200V,the average growth rate of the film increases from 1.5μm/h to 11.3μm/h. With an increase in the pulse bias,the （111） preferred orientation becomes more obvious while the peak intensity in （200） orientation gradually decreases. The TiN film with column growth characteristic has obvious preferred orientation,whose degree is closely related to the pulse bias value.

关 键 词：TIN膜 铝合金衬底 脉冲偏压 薄膜生长 择优取向 柱状特征 硬质膜 结合强度 

分 类 号：TP391.9[自动化与计算机技术—计算机应用技术]