砷化镓晶片表面损伤层分析  

Analyses of Surface Damage in SIGaAs Wafers

作　　者：郑红军[1] 卜俊鹏[1] 曹福年[1] 白玉柯[1] 吴让元[1] 惠峰[1] 何宏家[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《稀有金属》1999年第4期241-244,共4页Chinese Journal of Rare Metals

摘　　要：采用ＴＥＭ观测与Ｘ射线双晶回摆曲线检测化学腐蚀逐层剥离深度相结合的方法，分析了ＳＩＧａＡｓ晶片由切、磨、抛加工所引入的损伤层深度。比较两种方法测量结果上的差异，得出了ＴＥＭ观测到的只是晶片损伤层厚度。The surface damage Layer in the SIGaAs wafer induced by cutting, grining and polishing was analyzed by means of transmission electron microscopy and Xray rocking curve measurements after the wafer was chemically etched. A method for determining the depth of surface damage layer of SIGaAs wafer according to the quantitative difference in the results obtained by the two methods is proposed.

关 键 词：砷化镓 切片 磨片 抛光片 表面损伤层 晶片 

分 类 号：TN304.23[电子电信—物理电子学]