外加横向磁场下Bridgman法生长HgCdTe晶体的实验研究  

Experimental Research on Growth of HgCdTe Crystal by Bridgman Method with a Transverse magnetic Field Applied

作　　者：蓝慕杰[1] 叶水驰[1] 鲍海飞[1] 于杰[1] 周士仁 王培林[1] 

机构地区：[1]哈尔滨工业大学航天电子与光电工程系,150001

出　　处：《哈尔滨工业大学学报》1999年第3期8-10,共3页Journal of Harbin Institute of Technology

摘　　要：介绍自行研制的可以施加横向磁场中的垂直Bridgman法晶体生长装置，该装置磁场强度可在0－0．6T围内连续调节，生长区温度梯度达40－70℃／cm．不同磁场强度下进行了HgCdTe晶体生长实验，通过测量分析，研究了轴向和径向组分分布的变化与磁场的关系．实验结果表明，由于磁场对熔体中热对流的作用，尤其是横向磁场与流胞的相互作用，在一定程度上改变生长界面的形状。The equipment for growth of HgCdTe crystal by the Bridgman is investigated with a transverse magneticfield applied. The intensity of the magnetic field can be adjusted continuously in the range of 0 ~ 0. 6T and the tem-Perature gradient is 40 ~ 70℃/cm in the growth zone. Some Samples of HgcdTe have been grown under differentmagnetic field intensities, and their radial and axial compositional profiles have also been analyzed. Experimentalresults show that the form of growth interface can be adjusted to a certain egree by the effeCt Of magnetic field onthermal conversion, espeCially interaction of transverse magnetic field with conversion cell, to improve the uniformityof radial composional distribution.

关 键 词：磁场 晶体生长 BRIDGMAN法 碲镉汞晶体 

分 类 号：O782.9[理学—晶体学]