有机薄膜晶体管钛/金电极的刻蚀工艺研究  

Investigation of the etching process of titanium/aurum electrodes of the organic thin film transistor

作　　者：严剑飞[1] 吴志明[1] 太惠玲[1] 李娴[1] 付嵩琦[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《功能材料》2010年第A02期361-364,共4页Journal of Functional Materials

基　　金：总装预研基金资助项目(9140A23060510DZ02);中央高校基本科研业务费专项资助项目(ZYGX2009J052)

摘　　要：采用感应耦合等离子体(ICP)干法刻蚀和湿法刻蚀的方法,分别刻蚀有机薄膜晶体管(OTFT)的钛/金薄膜电极。改变刻蚀的工艺条件,研究了不同的刻蚀工艺对OTFT器件性能的影响,并对刻蚀结果进行了比较与分析。结果表明,ICP干法刻蚀不适合用来刻蚀OTFT器件的钛/金电极,而湿法刻蚀工艺可用于刻蚀关键尺寸为5μm及其以上的钛/金电极,其最佳工艺条件分别是n(HF):n(HNO3):n(H2O)=1:1:5和n(KI):n(I2):n(H2O)=4:1:40。Titanium/aurum thin films which were used as the electrode of the organic thin film transistor（OTFT）were etched respectively by inductively coupled plasma（ICP）dry etching and wet etching.The effect of different etching process on the performance of OTFT was investigated by changing the etching process,and the results were compared and analysed.The results showed that ICP dry etching is not suitable for etching titanium/aurum electrodes,and n（HF）：n（HNO3）：n（H2O）=1：1：5 and n（KI）：n（I2）：n（H2O）=4：1：40 were the optimum etching processes for etching titanium and aurum electrode with the critical dimensions of 5 microns and more,respectively.

关 键 词：刻蚀 有机薄膜晶体管 钛/金 最佳工艺条件 

分 类 号：TN321.5[电子电信—物理电子学]