快中子辐照直拉硅中的氧沉淀及诱生缺陷  

OXYGEN PRECIPITATION AND INDUCED DEFECTS IN FAST NEUTRON IRRADIATED CZOCHRALSKI SILICON

作　　者：马巧云[1,2] 陈贵锋[1,3] 马晓薇[1] 薛晶晶[1] 郝秋艳[1] 

机构地区：[1]河北工业大学材料学院,天津300130 [2]天津商业大学理学院,天津300134 [3]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《硅酸盐学报》2010年第10期1927-1930,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(50872028);河北省自然科学基金(E20-08000079);河北省教育厅科研计划(2009318)资助项目

摘　　要：利用光学显微镜和透射电子显微镜,研究了1100℃退火后快中子辐照直拉硅中氧沉淀及诱生缺陷的产生及其随退火时间的演变情况。实验发现:在快中子辐照直拉硅中,氧沉淀过程中产生了氧沉淀诱生的体层错和结构复杂的位错环。延长退火时间,缺陷密度增加。当过饱和态的间隙氧基本沉淀之后,诱生缺陷密度不再变化。较高剂量辐照样品中的缺陷尺寸较大,但密度相对较低。经高温退火的快中子辐照直拉硅中生成了直径约为40nm的氧沉淀,其形貌为多面体氧沉淀。Oxygen precipitation and induced defects were investigated in fast neutron irradiated Czochralski silicon（CZ-Si） after annealing at 1 100 ℃ by optical microscopy and transmission electron microscope.The results indicate that the oxygen precipitates induced stacking fault,dislocation and dislocation loop were produced in fast neutron irradiated CZ-Si during the process of oxygen precipitation.With the increase of annealing time,the density of defects increases until all the supersaturated interstitial oxygen precipitates.The defects in the higher dose irradiated sample are larger than that in the lower doses irradiated one,but the density of defects is lower.The diameter of polyhedral oxygen precipitates in CZ-Si after the annealing is 40 nm.

关 键 词：快中子辐照 直拉硅 氧沉淀 缺陷 

分 类 号：TN304.1[电子电信—物理电子学] TU472.5[建筑科学—结构工程]