一维半导体器件数值模拟的沿特征线的有限体积元方法(英文)  

The Characteristic Finite Volume Element Method for 1-D Semiconductor Device Simulation

作　　者：龙晓瀚[1] 陈传军[2] 

机构地区：[1]鲁东大学数学与信息学院,烟台264025 [2]烟台大学数学与信息科学学院,烟台264005

出　　处：《工程数学学报》2010年第5期925-931,共7页Chinese Journal of Engineering Mathematics

基　　金：The Program for Innovative Research Team in Ludong University.

摘　　要：利用有限体积元方法结合特征线方法来处理一维热传导型半导体器件数值问题。提出并研究了一类全离散隐欧拉特征有限体积元格式。对电子位势和其他未知变量采用不同的时间步长处理,构造了该格式的计算程序,通过理论分析得到了一阶精度L^2-模误差估计结果。最后给出数值实验验证理论结果。The finite volume element method is combined with the characteristic method to treat the one-dimensional semiconductor device simulation problem.A fully discrete implicit Euler characteristic finite volume element scheme is derived and studied.With different time steps for the electrostatic potential and other unknown quantities,the computational procedure of the new method is constructed.A priori convergence estimate of first-order accuracy in L^2-norm is obtained under suitable assumptions.Numerical experiments demonstrate the validity of the theoretical results and efficiency of the method.

关 键 词：半导体器件 特征线方法 有限体积元方法 误差估计 

分 类 号：O241.82[理学—计算数学]