Si衬底GaN外延材料六角形缺陷分析  

Hexagonal Defects Analysis of GaN Epilayers Grown on Si Substrates

作　　者：尹甲运[1] 刘波[1] 王晶晶[1] 周瑞[1] 李佳[1] 敦少博[1] 冯志红[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051

出　　处：《微纳电子技术》2010年第10期603-605,共3页Micronanoelectronic Technology

基　　金：国家自然科学基金重大项目(60890192)

摘　　要：通过改变AlN形核层的生长温度分别在Si(111)衬底上生长了两个GaN样品,并对GaN外延材料表面的六角形缺陷进行了分析研究。通过显微镜和扫描电镜(SEM)观测发现,AlN形核层在高温下生长时,GaN材料表面会产生大量六角形缺陷。通过电子能谱(EDS)分析得出GaN六角形缺陷中含有大量的Si元素以及少量的Ga和Al元素,其中Si元素从Si衬底中高温扩散而来。在降低AlN形核层的生长温度后,GaN材料表面的六角形缺陷随之消失。表明AlN形核层在较低的温度下生长时可以有效地抑制Si衬底表面Si原子的扩散,减少外延层中由于衬底Si反扩散引起的缺陷。Two GaN samples were grown on Si（111）substrates by changing the growth temperature of AlN nucleation layers,and the hexagonal defects on the GaN epitaxial surface were investigated.Through the microscope and SEM,it is found that a large number of hexagonal defects generated on the GaN epitaxial surface,when the AlN nucleation layer was grown at high temperature.Analyzing by EDS,the hexagonal defects mainly contain Si elements and a little Ga and Al elements,the Si elements in the hexagonal defects are diffused from Si substrates.The hexagonal defects of the GaN material layer disappear as the growth temperature of the AlN nucleation layer decreases.It is indicated that when the AlN nucleation layer is grown at a lower temperature,the Si diffusion from the substrate surface is effectively suppressed,and the hexagonal defects of the GaN epitaxial surface due to the Si anti-diffusion from the substrate surface are reduced.

关 键 词：GAN 六角形缺陷 AlN形核层 温度 SI衬底 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054