生长和退火温度对磁控溅射法制备的ZnO薄膜性能的影响  

Influence of Growth and Annealing Temperatures on Properties of ZnO Thin Films Prepared by RF Magnetron Sputtering

作　　者：王彬[1] 赵子文[1] 邱宇[1] 马金雪[1] 张贺秋[1] 胡礼中[1] 

机构地区：[1]大连理工大学物理与光电工程学院,大连116024

出　　处：《人工晶体学报》2010年第5期1119-1123,共5页Journal of Synthetic Crystals

基　　金：辽宁省教育厅重点实验室基金(No.20060131);高等学校博士学科点专项科研基金(No.20070141038)

摘　　要：利用磁控溅射法于500℃、550℃、600℃和650℃下在A l2O3(001)衬底上生长ZnO薄。对生长的ZnO薄膜后分别进行了800℃退火和1000℃退火处理。利用X射线衍射(XRD)、霍尔测试仪和透射谱仪对薄膜的结构、电学和光学性质进行了研究,结果表明合适的生长温度和退火温度能够提高ZnO薄膜的结晶质量和性能。ZnO thin films were deposited on Al2O3（001）substrates by megnetron sputtering method at 500 ℃,550 ℃,600 ℃ and 650 ℃,respectively.The as-deposited ZnO films samples were annealed at 800 ℃ and 1000 ℃.The structure,electrical and optical properties of the ZnO thin films were investigated by X-ray diffraction（XRD）,Hall and transmittance spectrum measurements.The results indicated that crystalline quality,electrical and optical properties could be highly improved by proper growth temperature and annealing temperature.

关 键 词：ZNO薄膜 磁控溅射 结晶质量 退火处理 

分 类 号：O472[理学—半导体物理]