气压和偏流对高掺硼金刚石晶体性质的影响(英文)  被引量:1

The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films

在线阅读下载全文

作  者:贾福超[1,2] 白亦真[1,2] 屈芳[1,2] 孙剑[1,2] 赵纪军[1,2] 姜辛 

机构地区:[1]大连理工大学物理与光电工程学院,辽宁大连116023 [2]大连理工大学三束材料改性教育部重点实验室,辽宁大连116023 [3]锡根大学材料工程研究所

出  处:《新型炭材料》2010年第5期357-362,共6页New Carbon Materials

基  金:supported by the 973 Program(Grant No.2008CB617614)~~

摘  要:采用热丝化学气相沉积法,改变工作气压和偏流,在硅基片上沉积了高掺硼金刚石膜。利用扫描电镜(SEM)、拉曼光谱和X射线衍射仪对沉积的金刚石膜表面形貌和结构进行表征。结果显示:当气体压强从3kPa降低到1.5kPa时,金刚石膜有较平的表面形貌和和较好的晶形,薄膜的晶体性质得到良好的改善。但是继续降气体压强,从1.5kPa到0.5kPa时,却呈现出相反的趋势。固定气体压强(1.5kPa),改变偏流,结果表明:适当的偏流(3A)可以改善掺硼金刚石的质量,偏流较高会导致薄膜中非金刚石相增多。Highly boron-doped diamond(BDD)films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents.The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy,Raman spectroscopy,and X-ray diffraction.Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5kPa,whereas they showed an opposite trend with a further decrease of the gas pressure from 1.5 to 0.5 kPa.An appropriate bias current(3A)was favorable in improving the qualities of the diamond films and a higher bias current led to an increase of the non-diamond phase in the films.

关 键 词:高掺硼金刚石膜 气体压强 偏流 热灯丝化学气相沉积 扫描电镜 X射线衍射仪 拉曼光谱 

分 类 号:TQ164[化学工程—高温制品工业] O484.4[理学—固体物理]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象