GaP:N LPE片的位错对发光亮度的影响  

DISLOCATION DENSITY OF GaP∶N LPE WAFER AND ITS INFLUENCE ON BRIGHTNESS

作　　者：李桂英[1,2] 李永良[1,2] 王亚非 杨锡震 孙寅官[1,2] 

机构地区：[1]北京师范大学分析测试中心 [2]中国科学院半导体研究所半导体材料科学开放实验室

出　　处：《发光学报》1999年第1期4-6,共3页Chinese Journal of Luminescence

摘　　要：用化学腐蚀配合扫描电镜（ＳＥＭ）对几种不同来源的国产ＧａＰＮ液相外延（ＬＰＥ）材料及各自的衬底的位错密度ＮＤ和发光亮度进行了测量．结果表明：样品的发光亮度随ＬＰＥ层的ＮＤ降低而升高，降低衬底的ＮＤ可降低ＬＰＥ层的ＮＤ．Using chemical etching combined with SEM measurement, the dislocation densities N D of the epilayer and substrate in GaP∶N LPE wafers from different sources are carried out. The brightness of the samples are measured also. The results indicate that the brightness increases as decreasing of the N D of the epilayer and a dicreasing of the epilayer N D can be caused by decreasing the subctrate N D.

关 键 词：位错密度 发光二极管 LPE 发光性能 磷化镓 

分 类 号：TN364[电子电信—物理电子学] O472.3[理学—半导体物理]