VDMOS器件总剂量辐照阈值电压影响因素分析  

Threshold Voltage Influencing Factor in VDMOS Devices Total Dose Radiation

作　　者：熊燕[1] 赖于树[1] 

机构地区：[1]重庆三峡学院物理与电子工程学院,重庆万州404100

出　　处：《重庆三峡学院学报》2010年第3期34-37,共4页Journal of Chongqing Three Gorges University

摘　　要：介绍了利用γ射线在不同偏置电压和不同辐照温度条件下,对不同导电沟道功率VDMOS器件进行总剂量辐照实验,从而分析研究这两种情况下器件总剂量辐照阈值电压的漂移情况.根据实验数据结合VDMOS器件物理特性分析得出:偏置电压相同时,导电沟道不同其阈值电压的漂移不同,而低温辐照则使得阈值电压漂移更加严重.This paper introduces total dose radiation experiment according to different electric conduction channel VDMOS device by using x-ray,under both different bias voltage and different exposure temperature condition,thus analyzing its total dose radiation threshold voltage drifting in both cases.According to the empirical datum and component VDMOS physical property,it draws a conclusion that on the same bias voltage,electric conduction channel is different and thus its threshold voltage drifts is different;but on the other hand the low temperature exposure makes threshold voltage drifting more serious.

关 键 词：Γ射线 VDMOS 阈值电压漂移 总剂量辐照 

分 类 号：TN386[电子电信—物理电子学]